Memristive Phase Change Memory
Manish Bilgaye1, Adesh Kumar2, Anurag Srivastava3, Piyush Dua4
1Manish Bilgaye*, Research Scholar Electrical & Electronics Engineering, School of Engineering, University of Petroleum and Energy Studies (UPES), Dehradun, India.
2Adesh Kumar, Department of Electrical & Electronics Engineering, School of Engineering, University of Petroleum and Energy Studies (UPES), Dehradun, India.
3Anurag Srivastava, Professor at ABV-Indian Institute of Information Technology and Management, Gwalior, India.
4Piyush Dua, Department of Physics, University of Petroleum and Energy Studies (UPES), Dehradun, India.
Manuscript received on September 22, 2019. | Revised Manuscript received on October 20, 2019. | Manuscript published on October 30, 2019. | PP: 4169-4173 | Volume-9 Issue-1, October 2019 | Retrieval Number: A1414109119/2019©BEIESP | DOI: 10.35940/ijeat.A1414.109119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The paper presents study on and simulation of resistive nonvolatile phase change memory (PCM) cell in NG Spice programming environment. The chalcogenide alloy based PCM cell model demonstrates switching between amorphous and crystalline phases. The crystalline factor, responsible for the phase change process, is programmed by applied variable electrical pulse. Parameters phase change, range of operating temperature, the crystalline factor are mapped and presented.
Keywords: Memristor, Nonvolatile memory, Thermal properties, Phase transformation, Electrical properties, Simulation and modeling.