Passive Voltage Contrast Technique for Semiconductor Device Analysis
C. Ramachandra1, J. Venkatesh2, Sarat Kumar Dash3
1Dr. C. Ramachandra, Professor, School of Sciences, Jain University, Bangalore (Krnataka), India.
2Dr. J. Venkatesh, Professor, School of Sciences, Jain University, Bangalore (Krnataka), India.
3Dr. Sarat Kumar Dash, Scientist, ISRO Satellite Centre, Bangalore (Krnataka), India.
Manuscript received on 10 October 2017 | Revised Manuscript received on 18 October 2017 | Manuscript Published on 30 October 2017 | PP: 19-21 | Volume-7 Issue-1, October 2017 | Retrieval Number: A5173107117/17©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Passive voltage contrast is found to be very effective in localizing defect / fault at micron / submicron scale in semiconductor devices. It requires use of Focused Ion Beam (FIB) System for analysis. Effectiveness of passive voltage contrast in identifying fault location is explained with case studies in DRAM devices.
Keywords: PVC, FIB, SEM, IC, DRAM, DLCT, BPSG, ILD, RIE, GDS,
Scope of the Article: Structural Reliability Analysis