Design of Self Controllable Voltage Level Circuit (SVL) for Low Power and High Speed 12t Sram at 15nm Technology
Kumar Neeraj1, J. K. Das2, Hari Shanker Srivastava3
1Mr. Kumar Neeraj, Assistant Professor, Anurag group of Institutions, Hyderabad, India.
2Dr. Jitendra Kumar Das, Associate Professor, School of Electronics Engineering, KIIT University, Bhubaneswar, Odisha, India.
3Dr. Hari Shanker Srivastava, Associate Professor, Anurag Group of Institutions, Hyderabad India.
Manuscript received on November 23, 2019. | Revised Manuscript received on December 15, 2019. | Manuscript published on December 30, 2019. | PP: 1561-1565 | Volume-9 Issue-2, December, 2019. | Retrieval Number: B3733129219/2019©BEIESP | DOI: 10.35940/ijeat.B3733.129219
Open Access | Ethics and Policies | Cite | Mendeley
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Due to trend of decreasing the device Size and increase in the chip density, the complexity in design increased and it became very complex. The main factor which is main concern in this step is Power dissipation. This can be occurring in many forms like Dynamic, subthreshold leakage and Gate leakage. For every situation the designer has to try to reduce this Power Dissipation factor. In this paper we designed a low power 12T SRAM by using the 15nm technology. SRAMs have large number of applications in high speed registers, microprocessors, small memory banks, general computing applications etc. Therefore delay, power, speed, leakage current and stability are the main concerns. These parameters are in trade off to each other. This paper focuses on the leakage current, power and stability in 12T SRAM bit -cell. We introduce a circuit “self – controllable Voltage Level (SVL)” circuit. The main task of this circuit is to reduce the stand-by leakage power of 12T SRAM. In our Work, We are using the Cadence Virtuoso simulation tool for simulating our circuit. After Comparing our results to the previous methods used for reducing the power leakage we found that there is reduction in average power compare to the previous methods used for power reduction techniques.
Keywords: SRAM, SVL 15nm,Cadence, 12TSRAM, Leakage current, Static Noise Margin(SNM).