Analysis and Study of V-I Characteristics by Replacing Low-K Dielectric (HfO2) with High-K Dielectric (La2O3) in MOSFET
Anurekha Mukherjee1, Sohini Mondal2
1Anurekha Mukherjee, Microelectronics & VLSI, Techno, Kolkata (West Bengal), India.
2Sohini Mondal, Microelectronics & VLSI, EZIPL, Kolkata (West Bengal), India.
Manuscript received on 15 April 2016 | Revised Manuscript received on 25 April 2016 | Manuscript Published on 30 April 2016 | PP: 147-157 | Volume-5 Issue-4, April 2016 | Retrieval Number: D4515045416/16©BEIESP
Open Access | Editorial and Publishing Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This project journal paper presents the analysis and study of Lanthanum oxide La2O3, one of the promising high-k dielectric films used in the MOSFET over hafnium dioxide, HfO2. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric La2O3 , an inorganic compound containing the rare earth element lanthanum and oxygen . The investigation has been carried out by experiment and modeling. With the advent of semiconductor technology in VLSI era, the channel length of a metal oxide semiconductor has drastically gone down. DIBL (Drain Induced Barrier Lowering) is one of the short channel effects which degrade the performance of a MOSFET with its down scaling. To understand this effect the study of the nature of surface potential and energy is very important. In this project an analytical model for threshold voltage of short channel MOSFETs is presented. For such devices, the depletion regions due to source/ drain junctions occupy a large portion of the channel, and hence are very important for accurate modeling. The proposed threshold voltage model is based on a realistic physically – based model for the depletion layer depth along the channel that takes into account its variation due to the source and drain junctions .With this, the unrealistic assumption of a constant depletion layer depth has been removed , resulting in an accurate prediction of the threshold voltage. The graphs between different parameters of HfO2 and La2O3 are verified against the simulator MATLAB and the comparative analysis of the features of the graph of both the oxides has been done
Keywords: Channel Length, DIBL, Pocket Doping, Threshold Voltage
Scope of the Article: Case Study and Experience Reports