Ring Oscillator Comparative Analysis at 22nm with bulk And High-K Metal Gate CMOS Technology and frequency impact
Shobha Sharma
Shobha Sharma, ECE, Indira Gandhi Institute of Technology, GGSIP university, Delhi, India.
Manuscript received on May 17, 2012. | Revised Manuscript received on June 25, 2012. | Manuscript published on June 30, 2012. | PP: 418-420 | Volume-1 Issue-5, June 2012. | Retrieval Number: E0565061512/2012©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: As we progress toward higher technology nodes there are improvement in density, frequency of operation and low power dissipation along with increase in leakage current and power. This paper examines a CMOS 11 stage ring oscillator implemented at 22nm node with bulk technology and High K metal Gate technology. Supply voltage increase results in increase in oscillation frequency in both the technology as expected. The simulation result shows the average power dissipated is more in High K Metal Gate technology compared to Bulk technology but the output frequency is more in High K metal gate technology. This results in lower energy/cycle in High K metal gate technology Ring Oscillator comparatively and hence shows that for advanced technology nodes this technology is a better option with reduced leakage due to High K material used. The experimental set up uses Predictive Technology models of Arizona State University at the two technology node and HSPICE simulator is used to carry out simulations.
Keywords: Bulk CMOS,, high K, Ring Oscillator, PTM.