Bulk Junctionless Transistor (JLT) with non-uniform doping: A high performance and scalable device
Dipak Kumar Singh1, Priyanka Mondal2, M. W. Akram3
1Dipak Kumar Singh, Department of Electronics and Communication Engineering, National Institute of Technology, Patna, India.
2Priyanka Mondal, Department of Electronics and Communication Engineering, National Institute of Technology, Patna, India.
3M. W. Akram, Department of Electronics and Communication Engineering, F/O Engineering and Technology, Jamia Millia Islamia, New Delhi, India.
Manuscript received on July 20, 2019. | Revised Manuscript received on August 10, 2019. | Manuscript published on August 30, 2019. | PP: 450-455 | Volume-8 Issue-6, August 2019. | Retrieval Number: E7856068519/2019©BEIESP | DOI: 10.35940/ijeat.E7856.088619
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In this paper we have presented the non-uniformly doped bulk Junction less transistor (JLT) and investigated bulk-JLT and SOI-JLT with non-uniform doping in terms of its electrical performance parameters and short channel effects (SCEs) parameters comparatively. Effective thickness of channel depends on non-uniform doping distribution parameters and this affects the performance of bulk-JLT notably, however it is not so in case of SOI-JLT. The effect of non-uniform doping on electrical characteristics of JLTs (bulk and SOI) in terms of Subthreshold Slope (SS), ON-current, OFF-Current and ON/OFF current ratio has been investigated, and the non-uniformly doped bulk-JLT exhibits high ON/OFF ratio (109 for 20 nm Gate Length). Moreover, the non-uniformly doped bulk-JLT also shows improved short-channel effects (SCEs) parameters (such as Drain Induced Barrier Lowering, Threshold Voltage variations etc.) compared to SOI-JLT. Lastly, the effect of standard deviation, dielectric constant, substrate doping, and well biasing on the device performance are examined to further improve the performance of bulk-JLT independently.
Keywords: Bulk-JLT, Non-Uniform (NU) Doping, SOI-JLT.