Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics 
Piyush Eklavya1, Nirmalya Debnath2, Shrey Vaishnav3, Ramavenkateswaran N.4
1Piyush Eklavya*, Electronics and Communication Engineering Department, R.V. College of Engineering, Bengaluru, India.
2Nirmalya Debnath, Electronics and Communication Engineering Department, R.V. College of Engineering, Bengaluru, India.
3Shrey Vaishnav, Electronics and Communication Engineering Department, R.V. College of Engineering, Bengaluru, India.
3Ramavenkateswaran N., Electronics and Communication Engineering Department, R.V. College of Engineering, Bengaluru, India.
Manuscript received on April 11, 2020. | Revised Manuscript received on May 15, 2020. | Manuscript published on June 30, 2020. | PP: 270-272 | Volume-9 Issue-5, June 2020. | Retrieval Number: E9477069520/2020©BEIESP | DOI: 10.35940/ijeat.E9477.069520
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn’t readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.
Keywords: TFT, TFT simulation, SPICE Modeling of TFT device, TFT based inverter, NOR