Performance Analysis Of Double-Gate Carbon-Nanotube FET And MOSFET For High Speed Integrated Circuits Design
Aakanksha Lakhanpal1, Karmjit Singh Sandha2
1Aakanksha Lakhanpal*, Research Scholar, Department of Electronics and Communication Engineering, Thapar Institute of Engineering and Technology, Patiala, Punjab India.
2Karmjit Singh Sandha, Assistant Professor, Department of Electronics and Communication Engineering, Thapar Institute of Engineering and Technology, Patiala, Punjab India.
Manuscript received on September 14, 2019. | Revised Manuscript received on October 05, 2019. | Manuscript published on October 30, 2019. | PP: 3207-3210 | Volume-9 Issue-1, October 2019 | Retrieval Number: F8445088619/2019©BEIESP | DOI: 10.35940/ijeat.F8445.109119
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This paper explains the detailed structure as well as performance of DG-CNTFET (Double Gate Carbon Nanotube Field Effect Transistor) and its performance is compared with the DG-MOSFET (Double Gate Metal Oxide Semiconductor Field Effect Transistor). Various parameters like I-V characteristics, ON current, OFF current and ON to OFF current ratio have been evaluated using nano-TCAD ViDES. Also, the transport description of DG-MOSFET and DG-CNTFET has been described in detail. It has been observed that DG-CNTFET has lower OFF current and higher ON current in comparison to the DG-MOSFET. The higher ON current of DG-CNTFET depicts that it requires less time to turn on the device in comparison with DG-MOSFET. Also, OFF current of the DG-CNTFET is lesser as compared to MOSFET. The DG-CNTFET’s higher ON to OFF current ratio outperforms the DG-MOSFET in term of switching speed of the device. It is proposed that CNTFET can be used as an alternative of MOSFETs for high speed Integrated Circuit (IC) design.
Keywords: DG-MOSFET, MWCNT, SWCNT, DG-CNTFET (Double Gate Carbon Nanotube Field Effect Transistor).