Development of Transparent and Flexible Transistor and Analysis of its Electrical and Optical Performances
Abdellah Mrij1, Abdelmajid EL Bakkali2, Jaouad Foshi3
1Abdellah Mrij, Department of Electronics Instrumentation and Measurement Physics, University Moulay Ismail, Boutalamine, Errachidia, Morocco.
2Abdelmajid EL Bakkali, Department of Electronics Instrumentation and Measurement Physics, University Moulay Ismail, Boutalamine, Errachidia, Morocco.
3Jaouad Foshi, Department of Electronics, Instrumentation and Measurement Physics, University Moulay Ismail, Boutalamine, Errachidia, Morocco.
Manuscript received on 15 December 2019 | Revised Manuscript received on 22 December 2019 | Manuscript Published on 31 December 2019 | PP: 120-124 | Volume-9 Issue-1S6 December 2019 | Retrieval Number: A10221291S619/19©BEIESP | DOI: 10.35940/ijeat.A1022.1291S619
Open Access | Editorial and Publishing Policies | Cite | Mendeley | Indexing and Abstracting
© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: This work discusses the development of innovative transistor from intelligent thin film. A developed semiconductor junction that constitutes the core of concepted transistor is being studied. Each technology of semiconductors has shortage of some performances. The recent work is an alternative by exploiting intelligent materials to build a transistor with transparency and flexibility characteristics. Many processes are encountered during preparation of the film especially chemical deposition and exposition to laser beam to ensure dopants integration. The physical phase is a challenge for newest technology like the plasma. Thereon, we give a real example of smart thin film. The band gap is also a defiance that we are reducing to ameliorate precisely the impedance and thickness and keep at order of nanotechnology. The fabricated junctions are tested by studying their operation in ordinal conditions. We judge the quality of junctions and transistor from their optical properties and electrical ones. Moreover, we analyze evolutions of electrical impedance in function of temperature and optical reflection coefficient.
Keywords: Reflection Coefficient, Laser Beam, Electric Impedance, Transistor, Flexibility.
Scope of the Article: Predictive Analysis