Electrical Characteristics of GaAs Nano- HEMT
Moumita Bhoumik
Moumita Bhoumik, Electronics & Communication Engineering Dept, Mallabhum Institute of Technology, Bishnupur, (West-Bengal), India.
Manuscript received on November 27, 2013. | Revised Manuscript received on December 13, 2013. | Manuscript published on December 30, 2013. | PP: 367-372 | Volume-3, Issue-2, December 2013. | Retrieval Number: B2490123213/2013©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: In today’s world, there is a demand for high frequency devices & circuits. And Nano technology can enhance the speed of devices & circuits due to reduction of its carrier transit time. Previously research work has been done regarding electrical characteristics of high frequency devices made up of semiconductor materials such as – MESFETs & HEMTs which included current-voltage characteristics and also Noise Power Spectral Density Analysis using various substrate materials like SiC, GaAs etc. [1] with gate length Lg in µm range. Now emphasis is given on electrical characteristics analysis on GaAs Nano-HEMT by reducing the gate length Lg in nm range.
Keywords: Gallium Arsenide, Nano-HEMT, Noise PSD, 1,f Noise.