Modified Ultra-Wideband Microwave Chaotic Colpitts Oscillator with a Simplified Structure: Implementation, Experiments
N. Maksimov1, A. Panas2
1N. Maksimov, Kotel’Nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, Fryazino, Moscow Region, 141190, Russia.
2A. Panas, Kotel’Nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, Fryazino, Moscow Region, 141190, Russia.
Manuscript received on 10 December 2016 | Revised Manuscript received on 18 December 2016 | Manuscript Published on 30 December 2016 | PP: 14-17 | Volume-6 Issue-2, December 2016 | Retrieval Number: B4770126216/16©BEIESP
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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC-BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)
Abstract: Modified Colpitts oscillator with SiGe bipolar transistor as an active element was introduced, implemented and experimentally studied. It enables generation of ultra-wideband chaotic oscillations in the microwave range. Compared to its classical analogue, the oscillator has an extremely simple structure comprising only one single external reactive element (an inductor). The transistor p-n junction capacitance performs the function of oscillator external capacitors. Stable generation of chaotic oscillations in the range of 1 to 8.5 GHz (at 10 dB level) with highest ever efficiency values (7%) for a given class of oscillators has been obtained.
Keywords: Chaotic Colpitts Oscillator, Ultra Wideband Chaotic Oscillations, Microwave Band, Power Spectra, Power Efficiency, Implementation, Bipolar Sige Transistor
Scope of the Article: Microwave Filter