Structures of Inclusions of Impurity Nickel Atoms in Silicon Monocrystals
Turgunov Nozimjon Abdumannopovich1, Berkinov Elmurod Khoshimjonovich2
1Turgunov Nozimjon Abdumannopovich*, scientific secretary, Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan.
2Berkinov Elmurod Khoshimjonovich, doctoral student, Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan.
Manuscript received on March 30, 2020. | Revised Manuscript received on April 05, 2020. | Manuscript published on April 30, 2020. | PP: 1436-1439 | Volume-9 Issue-4, April 2020. | Retrieval Number: D7358049420/2020©BEIESP | DOI: 10.35940/ijeat.D7358.049420
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Abstract: Morphological parameters of microinclusions and nanoinclusions of impurity nickel atoms in silicon are studied by electron probe microscope. The dependence of the structural constructions of impurity clusters on their size and shape was studied. Quantitative indicators of the distribution of the atoms of the main and technological impurities over the volume of impurity clusters are established.
Keywords: Accumulations of impurity nickel atoms, morphological parameters, electron probe microanalysis