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Comparison of High Pressure DC-sputtering and Pulsed Laser Deposition of Superconducting Bi1.6Pb0.4Sr2Ca2Cu3O10+δ
Ghazala Y.Hermiz1, Mahdi H. Suhail2, Suzan M.Shakouli3
1Ghazala Y. Hermiz, Physics Department, Baghdad University, College of Science ,Baghdad, Iraq.
2Mahdi H. Suhail, Physics Department, Baghdad University, College of Science ,Baghdad, Iraq.
3Suzan M. Shakouli, Physics Department, AL-Mustansiriyah University, College of Education, Baghdad, Iraq.
Manuscript received on May 22, 2013. | Revised Manuscript received on June 09, 2013. | Manuscript published on June 30, 2013. | PP: 22-25 | Volume-2, Issue-5, June 2013. | Retrieval Number: E1630062513/2013©BEIESP

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© The Authors. Blue Eyes Intelligence Engineering and Sciences Publication (BEIESP). This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/)

Abstract: Superconducting Bi1.6Pb0.4Sr2Ca2Cu3O10+δ thin films were deposited on Si(111) substrates using two different techniques: dc-sputtering at high oxygen pressure and pulsed laser deposition. The structure and electrical properties of the obtained films were compared. The transition temperature Tc for bulk and films deposited by PLD is 102 K and 97 K respectively, while Tc of films prepared by dc sputtering is 90 K. The structural analysis was carried out by XRD on pellet sample and its annealed and as deposited films .The surface morphology of the films have been studied by using AFM.
Keywords: DC-sputtering; PLD; Thin film superconductors.